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1 datasheet dual laser driver with apc amplifier and spread spectrum oscillator ISL58831 the ISL58831 is a combination read + 3 write level laser driver and iv amplifier, with an extr a read + oscillator rom channel for use in dual-laser ?combo? drivers. a separate (amplitude and frequency) oscillator modulates the selected output for laser noise reduction during read or write. all these functions are provided in a 24 ld qfn package. the sel1 pin, when high, selects the dvd (write) laser. positive current supplied to the i in lines, through a user-selected resistor, allow the full-scale range of each amplifier to be matched to the full-scale range of the users control dacs. when the write laser is selected, and the wen pins are switched low, the respective current is summed to the output with 1ns rise and fall times. write channel 2 has 240ma output capability with an 250x gain amplifier. the 100ma p-p (maximum) oscillator is switched on and off by the oscen line. the sel1 line allows the oscillator to operate at different amplitudes and frequencies for each laser. the entire chip is powered down when enable is low. the user can define the gain of the i/v amplifier. with a slew rate of 200v/s, the i/v amplifier can normally settle to 1% within 30ns. an internal spread spectrum circuit modulates the oscillator frequency to help reduce peak emi. features ? ?shrink-small? outline package ? voltage-controlled output cu rrent source requiring one external set resistor per channel ? current-controlled output current source ? ch2 to 235ma maximum ? ch3 to 170ma maximum ? ch4 to 100ma maximum ? rise time = 0.8ns ? fall time = 0.8ns ? on-chip oscillator with frequency and amplitude control by use of external resistors to ground ? oscillator to 600mhz ? oscillator to 100ma p-p ? single +5v supply (10%) ? disable feature for power-up protection and power savings ? 200v/s i/v amplifier ? internal spread spectrum modulation to reduce peak emi ? pb-free (rohs compliant) applications ?combo cd-r + dvd-r ?dvdrw to 8x ? writable optical disk drives data sheet caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. 1-888-intersil or 1-888-468-3774 | copyright intersil americas llc 2006, 2016. all rights reserved intersil (and design) is a trademark owned by intersil corporation or one of its subsidiaries. all other trademarks mentioned are the property of their respective owners. january 28, 2016 fn7440.1
ISL58831 2 fn7440.1 january 28, 2016 submit document feedback typical application rom laser 19 18 17 16 15 14 13 24 23 22 21 20 8 9 10 11 12 1 2 3 4 5 6 7 iin2 rf1 iin3 iin4 rf2 wen2 sel1 vddn iout1 gnd ss_mon iout2 ramp1 ramp2 iinr vref vout pdin vddn wen3 wen4 vddq oscen enable thermal pad - + 2.4k 3k 2.4k 3k 2.4k 68 68 68 68 5v 3v 4.7f 4.7f 0.1f 68 330 10k 1.5k 1pf photo laser 0.1f 0.1f 100 1k 1k 0.1f 4.7f 2.4k figure 1. typical application ordering information part number ( notes 2 , 3 ) part marking package (rohs compliant) tape and reel quantity (units) pkg. dwg. # ISL58831crz 58831 crz 24 ld qfn - mdp0046 ISL58831crz-t13 ( note 1 ) 58831 crz 24 ld qfn 2.5k mdp0046 notes: 1. please refer to tb347 for details on reel specifications. 2. intersil pb-free plus anneal products employ special pb-free material sets; molding compounds/die attach materials and 100% m atte tin plate termination finish, which are rohs compliant and compatible with both snpb and pb-free soldering operations. intersil pb-free p roducts are msl classified at pb-free peak reflow temp eratures that meet or exceed the pb-fr ee requirements of ipc/jedec j std-020. 3. for moisture sensitivity level (msl), please see product information page for ISL58831 . for more information on msl, please see tech brief tb363 .
ISL58831 3 fn7440.1 january 28, 2016 submit document feedback block diagram xgain2 xgain3 xgain4 oscillator - + write drivers read current amplifier gainr apc amp 2x read driver oscillator driver oscillator driver power control read driver vout vref iinr iin2 rf1 iin3 iin4 rf2 wen2 sel1 wen3 wen4 iout2 oscen enable ramp2 ramp1 iout1 vddq gnd ss_mon pdin vddn vddn figure 2. block diagram
ISL58831 4 fn7440.1 january 28, 2016 submit document feedback pin configuration ISL58831 (24 ld qfn) top view 19 18 17 16 15 14 13 24 23 22 21 20 8 9 10 11 12 1 2 3 4 5 6 7 iin2 rf1 iin3 iin4 rf2 wen2 sel1 vddn iout1 gnd ss_mon iout2 ramp1 ramp2 iinr vref vout pdin vddn wen3 wen4 vddq oscen enable thermal pad pin descriptions pin number pin name pin function pin description 1 iin2 analog input pin for iin2, which current is amplified and output to iout1 (add external series resistor when voltage driven ). 2 rf1 analog external resistor to ground sets the oscillator frequency when sel1 = 1. 3 iin3 analog input pin for iin3, which current is amplified and output to iout1 (add external series resistor when voltage driven ). 4 iin4 analog input pin for iin4, which current is amplified and output to iout1 (add external series resistor when voltage driven ). 5 rf2 analog external resistor to ground sets the oscillator frequency when sel1 = 0. 6 wen2 digital wen2 = 0 applies the current from the iin2 amplifier to the iout pin. 7 sel1 digital if sel1 = 1, iout1 and rfreq1 and ramp1 are se lected, otherwise iout2 and rfreq2 and ramp2 are selected. 8 wen3 digital wen3 = 0 applies the current from the iin3 amplifier to the iout pin. 9 wen4 digital wen4 = 0 applies the current from the iin4 amplifier to the iout pin. 10 vddq power supply +5v supply for bias and amplifiers (connect all supplies). 11 oscen digital oscen = 1 powers up the oscillator and oscilla tor driver and passes specified oscillator current to i out . 12 enable digital enable = 1 powers up the chip, en able = 0 puts the chip in power-down mode. 13 ramp2 analog external resistor to ground se ts the oscillator amplitude when sel1 = 0. 14 ramp1 analog external resistor to ground se ts the oscillator amplitude when sel1 = 1. 15 iout2 analog output current source for rom laser diode at [82 * i inr + i osc (ac)]. 16 ss_mon analog modulation rate monitor. 17 gnd power supply ground (connect all grounds). 18 iout1 analog output current source for rw laser diode [100 * (1.65 * i inr + 2.5 * i in2 + 2.0 * i in3 + i in4 ) + i osc (ac)]. 19 vddn power supply +5v supply for output drivers (connect all supplies). 20 vddn power supply +5v supply for output drivers (connect all supplies). 21 pdin analog connect the photo diode to this pin for the i-v amplif ier input; connect the gain resistor and compensation capacit or between pdin and vout. 22 vout analog output voltage from i-v amplifier. 23 vref analog reference voltage for the i-v amplifier. 24 iinr analog input pin for iinr (iinr2), which current is amplifie d and output to iout1 (iout2) (add external series resistor wh en voltage driven). pd thermal pad should be connected to gnd.
ISL58831 5 fn7440.1 january 28, 2016 submit document feedback note: compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design. absolute maximum ratings (t a = +25 c) thermal information voltages applied to: v dd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5v to +6.0v wen . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5v to v dd +0.5v i inx . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5v to +5.0v i out . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5v to v dd +0.5v power dissipation (maximum) . . . . . . . . . . . . . . . . . . . . . . . . . . . see page 9 i out current. . . . . . . . . . . . . . . . . . . . . . . . . . . . 300ma average, 500ma p-p thermal resistance (typical) ? ja (c/w) 24 ld qfn package ( note 4 ). . . . . . . . . . . . . . . . . . . . . . 42 maximum junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . .+150c storage temperature range. . . . . . . . . . . . . . . . . . . . . . . .-65c to +150c pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see tb493 recommended operating conditions operating ambient temperature range . . . . . . . . . . . . . . . . 0c to +80c v dd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5v 10% r freq . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500 (minimum) r amp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .500 (minimum) f osc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mhz to 600mhz a osc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20ma p-p to 100ma p-p caution: stresses above those listed in ?absolute maximum ratings? may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specificatio n is not implied. note: 4. ? ja is measured with the component mounted on a high effective thermal conductivity test board in free air. see tech brief tb379 for details. electrical specifications v dd = 5v, t a = +25c, enable = hi, wen = hi, oscen = lo, sel1 = hi, unless otherwise specified. parameter description test conditions min typ max unit v dd supply voltage 4.5 5.0 5.5 v is1 supply current (disabled) enable = <0.5v 0.1 100 a is2 supply current i inr = 0a, i in2/3/4 = 20a 34 40 46 ma is3 supply current oscen = hi, i inr = 0a, i in2/3/4 = 20a 50 60 70 ma is4 supply current i inr = 0a, i in2/3/4 = 500a 61 73 85 ma is5 supply current i inr = 200a, i in2/3/4 = 500a 94 112 130 ma dv lo digital low voltage wen2/3/4, oscen inputs 1.3 v ev lo enable low voltage enable pin (to guarantee is1) 0.5 v dv hi digital high voltage wen2/3/4, oscen inputs 2.2 v ev hi enable high voltage enable pin only 2.2 v dv hicd digital high voltage sel1 only 2.2 v dv locd digital low voltage sel1 only 1.3 v di lo digital low current sel1, osce n, enable, wen = 0.0v -100 a di hi digital high current sel1, osce n, enable, wen = 5.0v 100 a v shut v dd shutdown voltage 3.5 3.9 v laser amplifier v dd = 5v, t a = +25c, enable = hi unless otherwise specified. parameter description conditions min typ max unit gainr best fit current gain channel r - i out1 ( note 5 ) 140 165 190 ma/ma gainr2 best fit current gain channel r2 - i out2 ( note 5 )708295ma/ma gain2 best fit current gain channel 2 - i out1 ( note 5 ) 210 250 290 ma/ma gain3 best fit current gain channel 3 - i out1 ( note 5 ) 170 200 230 ma/ma gain4 best fit current gain channel 4 - i out1 ( note 5 )80100120ma/ma i outr output current v dd = 4.5v, v out = 3.4v, output is sourcing, channel r - i out1 ( note 5 ), iinr = 2ma 150 ma
ISL58831 6 fn7440.1 january 28, 2016 submit document feedback i outr2 output current v dd = 4.5v, v out = 2.1v, output is sourcing, channel r2 - i out2 ( note 5 ), iinr2 = 2ma 120 ma i out2 output current v dd = 4.5v, v out = 3.4v, output is sourcing, channel 2 - i out1 ( note 5 ), iin2 = 2ma 235 ma i out3 output current v dd = 4.5v, v out = 3.4v, output is sourcing, channel 3 - i out1 ( note 5 ), iin3 = 2ma 170 ma i out4 output current v dd = 4.5v, v out = 3.4v, output is sourcing, channel 4 - i out1 ( note 5 ), iin4 = 2ma 100 ma iosr best fit current offset channel r ( note 5 )-6+6ma ios2, 3, 4 best fit current offset channels 2, 3, 4 ( note 5 ) -6 +6 ma ilin output current linearity any channel ( note 5 )-3+4% idac input current range input is sinking 0 2 ma r inr i inr input impedance r in is to gnd 562 750 937 r in2, 3, 4 i in2, 3, 4 input impedance r in is to gnd 375 500 625 vth wen2/3/4 threshold for write pulses temperature stabilized 1.68 v i off1 output off current 1 enable = lo 0.5 ma i off2 output off current 2 wen = hi, total for all channels 1.5 ma i off3 output off current 3 wen = lo, i in = 0a, total for all channels 5 ma vc1 i out supply sensitivity i out = 40ma, v dd = 5v 10%, read only -3 3 %/v vc2 i out supply sensitivity i out = 80ma, 40ma read + 40ma write -3 3 %/v in out i out current output noise i out = 40ma, oscen = lo 3.5 na/ ? hz tc1 i out temperature sensitivity i out = 40ma, read only +100 ppm/c tc2 i out temperature sensitivity i out = 80ma, 40ma read + 40ma write -100 ppm/c note: 5. the amplifier linearity is calculated using a best fit method at three operating points. the output currents chosen are 20ma, 40ma, and 60ma. the transfer function for i out is defined as follows: i out = (i in * gain) +i os . laser amplifier v dd = 5v, t a = +25c, enable = hi unless otherwise specified. (continued) parameter description conditions min typ max unit laser current amplifier outputs ac performance v dd = 5v, i out = 40ma dc with 40ma pulse, t a = +25c unless otherwise specified. parameter description conditions min typ max unit tr2 write rise time i out = 40ma (read) + 40ma (10%-90%) 0.8 2.0 ns tf2 write fall time i out = 40ma (read) + 40ma (10%-90%) 0.8 2.0 ns os output current overshoot measured on 6.8 resistor load 5 % t on i out on propagation delay input timing to i out at 50% of final value ( note 6 ) 2.0 ns t off i out off propagation delay input timing to i out at 50% of final value ( note 6 ) 2.0 ns t dis disable time input timing to i out at 50% of final value ( note 6 ) 20 ns t en enable time input timing to i out at 50% of final value ( note 6 ) 150 ns bw amplifier bandwidth i out = 50ma, all channels, -3db value 8 mhz f osc oscillator frequency r freq = 5600 290 328 360 mhz tc osc oscillator temperature coefficient r freq = 4500 200 ppm/c note: 6. input timing is defined as wenx or enable input pulse cros ses 1.68v. input pulse is standa rd 3.3v cmos-level ttl input.
ISL58831 7 fn7440.1 january 28, 2016 submit document feedback apc amplifier v dd = 5v, t a = +25c, r load = 2k to v ref unless otherwise specified. parameter description conditions min typ max unit bw bandwidth g = 1 100 mhz sr slew rate g = 1, v o = 0.5v to 3v 200 v/s t s settling time to 0.1%, v out = 0.5v to 3v 30 ns a vol open loop voltage gain v out = 0.5v to 3v 80 db v os offset voltage v ref = 3v -5 +5 mv t c v os input offset voltage temperature coefficient +4 v/c i b input bias current v ref = 3v -0.5 +0.5 a cmir common-mode input range cmrr ? 54db 1 v dd -1 v cmrr common-mode rejection ratio v cm = 1.0v to 4.0v 55 75 db r in input impedance 1m c in input capacitance pin 21 (p din )2pf v out output voltage swing r l = 2k to v ref ( note 7 )0.5v dd -0.5 v note: 7. r l is total load resistance due to feedback resistor and load resistor. recommended feedback resistor is 5k . i out control enable sel1 wen2 wen3 wen4 i out1 i out2 0xxxx off off 11111165 * i inr off 11011(165*i inr ) +(250*i in2 )off 11101(165*i inr ) +(200*i in3 )off 11110(165*i inr )+(100*i in4 )off 10xxx off 82*i inr oscillator control enable oscen sel1 i oscillator 0xxoff 10xoff 1 1 1 oscillator on to i out1 1 1 0 oscillator on to i out2
ISL58831 8 fn7440.1 january 28, 2016 submit document feedback timing diagram the ISL58831 oscillator frequency is controlled by the current being sourced at the r freq pin. for a typical part, equation 1 (accurate to better than 5mhz at any frequency) should be used to determine the frequency of operation: ena wen2 i out1 t en t off t on t f2 t r2 t dis osen wen3 wen4 figure 3. timing diagram typical performance curves figure 4. frequency control figure 5. i cc vs frequency (excluding i out ) figure 6. amplitude control 250 frequency (mhz) r freq (k) 650 350 450 550 7 6 5 4 3 2 1 200 frequency (mhz) i cc (ma) 600 300 400 500 60 50 45 40 35 30 55 r freq = 1.65k 0 r amp (k) oscillator amplitude modulation (ma p-p ) 5 234 140 80 60 40 20 0 120 1 r freq = 2.5k r freq = 5k 100 freq mhz ?? -5.9672 10 -10 r freq 3 1.5839 10 -5 r freq 2 0.1596 r freq 841.34 + ? C ? ? + ? ? = (eq. 1)
ISL58831 9 fn7440.1 january 28, 2016 submit document feedback applications information enable and read operation the enable line powers up the chip and supplies bias to all the circuits. after being enabled, read current can be obtained by applying a current to the i inr input. the read power is usually operated in an automatic power control loop, by varying the current in the i inr pin in response to the monitored laser light power. equation 2 is the defining equation for each amplifier: oscillator operation usually a laser will be noisy due to mode-hopping often caused by variable optical feedback into the laser. r f current can be applied to reduce this noise effect by bringing the oscen pin high. the amplitude of the r f is set by the r amp resistor and the frequency is set by the r freq resistor. see the ? typical performance curves ? on page 8 for resistor set values. r f current is applied in a on/off fashion. thus, if the r f amplitude is 50ma p-p , 50ma will be added to the read current for half the r f cycle, and then 0ma will be added to the read current for half the r f cycle. in this case, if the threshold current is only 40ma, the average laser power could exceed the intended read laser power by about 2mw, due to the 50% duty cycle current of 10ma above threshold. therefore, in order to regulate the read power, it is necessary to make sure that the r f amplitude is not much more than the required dc read current. the circuit has a feature to increase the ability to turn off the laser for low threshold currents. at low read currents, the amplitude of the r f will be reduced as the amplitude of the read current is reduced. write levels typical applications will have at least two write powers. the recommended method to control the write power level is to assign channel 2 to the lowest po wer level above read and add in channel 3 to obtain the highest write power level. this spreads the gain over the most amplifiers, allows the largest current level to the laser, reduces the sensitivity of each input and provides the most protection to the laser in case of erroneous input commands. write switching waveforms the wen lines are applied to a fast comparator set to 1.67v. this makes it possible to have predictable rise and fall propagation delays from the wen write pulse inputs to the laser. power supply decoupling due to the high values of current being switched rapidly on and off, it is important to ensure that the power supply is well decoupled to ground. during switching, the v dd undergoes severe current transients, thus every effort should be made to decouple the v dd as close to the package as possible, and to route the laser cathode to the decoupling capacitor with a short wide trace. symptoms that coul d arise include poor rise/fall times, current overshoot and poor settling response. since even a well placed bypass capacitor will have a response limitation due to the lead inductance, it migh t be necessary to also place a lossy bead and a second decoupling capacitor on the supply side of the bead to prevent switching currents on the supply line from generating emi. laser diode routing it is very important to minimize the inductance of the trace between the iout pin and the laser diode. this trace acts as an antenna for emi, inhibits the flow of r f and pulse current to the laser and absorbs r f current into ground. the ground return from the laser cathode to the chip and decoupling capacitors is best as a wide plane on both sides of the trace leading to the laser anode. ringing of the waveform might be observed on the iout pin. the best way is to check the optical output of the laser with an optical probe. if ringing is confirmed that cannot be reduced by an improved layout, the addition of an rc snubber network right at the output of the laser driver may be helpful. be aware however, that the rise time might be affected and that the pulse power might be affected by pattern dependent voltage build-up on the snubber capacitor. users should expect to lose 0.5ns of tr/tf for every 1cm of distance from iout to the laser diode and back to the v dd decoupling capacitor. power consumption issues the ISL58831 has been designed for low power consumption. when disabled, the part takes negligible power consumption, regardless of the state of the other pins. in addition, for v dd <3.5v, the ISL58831 will shut do wn to less than 1ma of supply current. when in normal operation, the ISL58831 total power consumption depends strongly on the laser diode current and voltage. since the total power consumption under worst case conditions could approach one watt , the burden is on the user to dissipate the heat into the board ground plane or chassis. an in-depth discussion of the effects of ground plane layout and size can be found in application note an1091 . an approximate equation for the device power consumption is shown in equation 3 (users must adjust accordingly for any duty cycle issues): where: i s = i s2 when oscillator off, or i s3 when oscillator on (see page 5 ) ? i in = sum of all the i in currents v dd = device power supply voltage i diode = laser diode current v diode = forward voltage of laser diode at current of i diode when using the ISL58831, the user must take extreme care not to exceed the maximum junction temperature of +150c. since the case-to-ambient thermal coeffi cient will dominate, and since this is very much defined by the user?s thermal engineering, it is not practical to define a strict limit on power consumption. i out v dac r set r inx + ---------------------------------- - gain ? = (eq. 2) p diss i ? s ? 14 ?? i in ?? v cc ? i diode v cc - v diode ?? ? ?? + ? ? + = (eq. 3)
ISL58831 10 fn7440.1 january 28, 2016 submit document feedback furthermore, the case-to-ambient thermal coefficient may not be known precisely. to assist in worst case conditions, it is possible to monitor the silicon temperature of the isl588 31 by forcing current into the enable pin, which will then be at a voltage of v dd + v pn , where v pn is the forward biassed voltage of the esd protection diode. since enable = hi is necessary fo r normal operation, the device can be operated as it would be in the real-life applications, while the temperature is monitored. the ISL58831 has been calibrated with a 1m resistor to +10v connected in series with the enable pin, which results in an input current of approximately 4.5a. figure 7 allows the silicon temperature to be determined directly. the graph shows the measured enable pin to vdd pin differential voltage, which shows a linear voltage sensitivity of -2.26mv/c. users may wish to measure their specific part at +20c (no warm-up) to allow for any statistical/process distribution, but the method is reliable and accurate. by applying this method to the ISL58831 in an actual application, users can measure th e silicon temperature under all operating conditions to dete rmine whether their thermal engineering is sufficient. the thermal resistance of the qfn24 is +140c/w when tested on a standard jedec jesd51-3 (single layer) test board. when using a standard jedec jesd51-7 (four layer) test board, the thermal resistance is +112c/w. actual thermal resistance is highly de pendent on circuit board layout considerations. temperature measurement set-up and results example: measure enable - v dd under coolest condition of v dd = 0v and v enable = 5v through 1m . suppose the result was 580mv at t ambient = +20c. now measure enable - v dd under the actual operating conditions. suppose result (must be after thermal equilibrium has been reached) is 450mv, and the new i cc value is 100ma. now one can calculate the temperature rise of (450 to 580)/ -2.26 = +57c. using the power dissipation of pw = (v dd * i cc ) - (i cc * v dd ), the ? ja of the application can be calculated. silicon temperature (c) enable pin - vdd pin (mv) 0 25 125 150 75 600 550 450 400 350 300 250 500 50 100 ena with 1m to +10v figure 7. ISL58831 on-chip thermometer enable v dd ISL58831 v 1m +10v +5v
ISL58831 11 intersil products are manufactured, assembled and tested utilizing iso9001 quality systems as noted in the quality certifications found at www.intersil.com/en/suppor t/qualandreliability.html intersil products are sold by description only. intersil corporat ion reserves the right to make changes in circuit design, soft ware and/or specifications at any time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnished by intersil is believed to be accurate and reliable. however, no responsi bility is assumed by intersil or its subsid iaries for its use; nor for any infringem ents of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of i ntersil or its subsidiaries. for information regarding intersil corporation and its products, see www.intersil.com fn7440.1 january 28, 2016 for additional products, see www.intersil.com/en/products.html submit document feedback about intersil intersil corporation is a leading provider of innovative power ma nagement and precision analog so lutions. the company's product s address some of the largest markets within the industrial and infrastr ucture, mobile computing and high-end consumer markets. for the most updated datasheet, application notes, related documentatio n and related parts, please see the respective product information page found at www.intersil.com . you may report errors or suggestions for improving this datasheet by visiting www.intersil.com/ask . reliability reports are also av ailable from our website at www.intersil.com/support . revision history the revision history provided is for informational purposes only and is believed to be accurate, but not warranted. please go t o the web to make sure that you have the latest revision. date revision change january 28, 2016 fn7440.1 updated to newest template and order of content . updated ordering information table - added quantity for tape and reel, added tape and reel and msl notes. page 5, above electrical spec table - changed ?i mportant note: all parameters having min/max specifications are guaranteed. typical values are for information purposes only. unless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: tj = tc = ta.? to: ?note: compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design.? page 6, laser current amplifier outputs ac performance table, output current overshoot - changed conditions from: see application notes t o: measured on 6.8o resistor load page 8, timing diagram - corrected the polarity of the wen2, wen3 and wen4 si gnals. correct polarity is active low. page 5, added thermal information section, ? ja (c/w) of 42. page 12, pod mdp0046 updated from rev 10 to rev 11 . no changes to pod, only internal record.
ISL58831 12 fn7440.1 january 28, 2016 submit document feedback qfn (quad flat no-lead) package family pin #1 i.d. mark 2 1 3 (n-2) (n-1) n (n/2) 2x 0.075 top view (n/2) ne 2 3 1 pin #1 i.d. (n-2) (n-1) n b l n leads bottom view detail x plane seating n leads c see detail "x" a1 (l) n leads & exposed pad 0.10 side view 0.10 b a m c c b a e 2x 0.075 c d 3 5 7 (e2) (d2) e 0.08 c c (c) a 2 c mdp0046 qfn (quad flat no-lead) package family (compliant to jedec mo-220) symbol millimeters tolerance notes qfn44 qfn38 qfn32 a 0.90 0.90 0.90 0.90 0.10 - a1 0.02 0.02 0.02 0.02 +0.03/-0.02 - b 0.25 0.25 0.23 0.22 0.02 - c 0.20 0.20 0.20 0.20 reference - d 7.00 5.00 8.00 5.00 basic - d2 5.10 3.80 5.80 3.60/2.48 reference 8 e 7.00 7.00 8.00 6.00 basic - e2 5.10 5.80 5.80 4.60/3.40 reference 8 e 0.50 0.50 0.80 0.50 basic - l 0.55 0.40 0.53 0.50 0.05 - n 44 38 32 32 reference 4 nd 11 7 8 7 reference 6 ne 11 12 8 9 reference 5 symbol millimeters toler- ance notes qfn28 qfn24 qfn20 qfn16 a 0.90 0.90 0.90 0.90 0.90 0.10 - a1 0.02 0.02 0.02 0.02 0.02 +0.03/ -0.02 - b 0.25 0.25 0.30 0.25 0.33 0.02 - c 0.20 0.20 0.20 0.20 0.20 reference - d 4.00 4.00 5.00 4.00 4.00 basic - d2 2.65 2.80 3.70 2.70 2.40 reference - e 5.00 5.00 5.00 4.00 4.00 basic - e2 3.65 3.80 3.70 2.70 2.40 reference - e 0.50 0.50 0.65 0.50 0.65 basic - l 0.40 0.40 0.40 0.40 0.60 0.05 - n 28 24 20 20 16 reference 4 nd 6 5 5 5 4 reference 6 ne 8 7 5 5 4 reference 5 rev 11 2/07 notes: 1. dimensioning and tolerancing per asme y14.5m-1994. 2. tiebar view shown is a non-functional feature. 3. bottom-side pin #1 i.d. is a diepad chamfer as shown. 4. n is the total number of terminals on the device. 5. ne is the number of terminals on the e side of the package (or y-direction). 6. nd is the number of terminals on the d side of the package (or x-direction). nd = (n/2)-ne. 7. inward end of terminal may be square or circular in shape wit h radius (b/2) as shown. 8. if two values are listed, mul tiple exposed pad options are av ailable. refer to device-s pecific datasheet.

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